A Ternary Content - Addressable Memory ( TCAM ) Based on 4 T Static Storage and Including a Current - Race Sensing Scheme
نویسندگان
چکیده
A 256 144-bit TCAM is designed in 0.18m CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed match-line (ML) sense scheme reduces power consumption by minimizing switching activity of search-lines and limiting voltage swing of MLs. The scheme achieves a match-time of 3 ns and operates at a minimum supply voltage of 1.2 V.
منابع مشابه
Low Power and High Performance SRAM-based Architecture for TCAM...V.Gopinath et al.,
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